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| AO6601 Complementary Enhancement Mode Field Effect Transistor General Description The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AO6601 is Pb-free (meets ROHS & Sony 259 specifications). AO6601L is a Green Product ordering option. AO6601 and AO6601L are electrically identical. Features n-channel p-channel -30V VDS (V) = 30V ID = 3.4A (VGS = 10V) -2.3A (VGS = -10V) RDS(ON) < 60m (VGS = 10V) < 135m (VGS = -10V) < 75m (VGS = 4.5V) < 185m (VGS = -4.5V) < 115m(VGS = 2.5V) < 265m (VGS = -2.5V) D1 TSOP6 Top View G1 S2 G2 16 25 34 D1 S1 D2 G1 S1 G2 D2 S2 n-channel p-channel Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Max p-channel -30 12 -2.3 -1.8 -30 1.15 0.73 -55 to 150 Units V V A VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG 12 3.4 2.7 30 1.15 0.73 -55 to 150 W C Junction and Storage Temperature Range Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Symbol RJA RJL Typ 78 106 64 Max 110 150 80 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO6601 n-channel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, V DS=5V VGS=10V, I D=3A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4.5V, I D=3A VGS=2.5V, I D=2A gFS VSD IS Forward Transconductance VDS=5V, ID=3A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.6 10 50 75 60 88 7.8 0.8 1 1.5 390 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 54.5 41 3 4.34 VGS=4.5V, V DS=15V, I D=3A 1.38 0.6 4 VGS=10V, VDS=15V, RL=5, RGEN=6 IF=3A, dI/dt=100A/s IF=3A, dI/dt=100A/s 2 22 3 11 5.5 75 115 60 1 Min 30 1 5 100 1.4 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6601 n-channel typical characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 12 9 ID (A) 2.5V 6 3 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 150 Normalized On-Resistance 125 VGS=2.5V RDS(ON) (m) 100 75 50 VGS=10V 25 0 0 2 4 6 8 10 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V 1.8 ID(A) 10 10V 3V 4.5V 6 8 VDS=5V 25C 125C 4 VGS=2V 2 0 0 0.5 1 1.5 2 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics 1.6 VGS=4.5V VGS=10V 1.4 1.2 VGS=2.5V 1 200 1.0E+01 1.0E+00 150 RDS(ON) (m) ID=2A 1.0E-01 IS (A) 125C 1.0E-02 1.0E-03 100 125C 50 25C 1.0E-04 25C 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha and Omega Semiconductor, Ltd. AO6601 n-channel typical characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 1 2 3 4 5 6 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=3.4A Capacitance (pF) 600 500 Ciss 400 300 200 100 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss 100.0 TJ(Max)=150C TA=25C RDS(ON) limited 10s 100s 1ms 0.1s 10ms 1s 10s DC Power (W) 20 TJ(Max)=150C TA=25C 15 10.0 ID (Amps) 10 1.0 5 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AO6601 p-channel MOSFET Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=-250A VGS=-4.5V, V DS=-5V VGS=-10V, I D=-2.3A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=-4.5V, I D=-2A VGS=-2.5V, I D=-1A gFS VSD IS Forward Transconductance VDS=-5V, ID=-2.3A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current 135 195 8 -0.85 -1 -1.35 409 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 55 42 12 4.8 VGS=-4.5V, V DS=-15V, I D=-2.5A 1.34 0.72 13 VGS=-10V, VDS=-15V, RL=6, RGEN=6 IF=-2.5A, dI/dt=100A/s IF=-2.5A, dI/dt=100A/s 10 28 13 26 15.6 185 265 -0.6 -10 107 135 -1 Min -30 -1 -5 100 -1.4 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3 : June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO6601, AO6601L P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 -10V 15 -5V -4.5V -4V -ID(A) VGS=-3.5V 10 -3V 5 -2.5V 2 -2V 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 250 225 200 RDS(ON) (m) 175 150 125 100 75 50 0 1 2 3 4 5 6 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 350 300 250 RDS(ON) (m) 200 150 100 50 0 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C ID=-2A -IS (A) VGS=-10V VGS=-4.5V Normalized On-Resistance VGS=-2.5V 1.4 VGS=-2.5V 1.2 ID=-2A 1 1.6 VGS=-4.5V, VGS=-10V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 -VGS(Volts) Figure 2: Transfer Characteristics 6 125C 4 8 10 VDS=-5V 25C -ID (A) 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics 125C 125C Alpha and Omega Semiconductor, Ltd. AO6601 p-channel typical characteristics TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 -VGS (Volts) 3 2 1 0 0 1 2 3 4 5 6 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-2.0A Capacitance (pF) 600 500 400 300 200 100 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss Ciss 100.0 TJ(Max)=150C TA=25C -ID (Amps) 10.0 RDS(ON) limited 0.1s 1.0 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 10ms 20 10s Power (W) 100s 1ms TJ(Max)=150C TA=25C 15 10 5 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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